s mhop microelectronics c orp. a stu/d35l01 symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 2.1 www.samhop.com.tw oct,29,2010 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 175 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.5 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 202 35 102 60 r e r r p p r p p o r r
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 24 g fs s c iss 2600 pf c oss 203 pf c rss 123 pf q g 63 nc 62 64 22 t d(on) 36 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =15a v ds =20v , i d =15a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 31 c f=1.0mhz c stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 2 v sd nc q gs nc q gd 6.3 14 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =15a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =8a 0.79 1.3 v notes v ds =50v,i d =15a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=5mh,v dd = 80v.(see figure13) _ _ _ 2 2.8 4 23 e.pulse test:pulse width < 1us,duty cycle < 1%. bv dss 105 v drain-source breakdown voltage v gs =0v , i d =10ma e
stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 70 56 42 28 14 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5v v gs =10v v gs =6v v gs =7v 50 40 30 20 10 0 0 1.4 8.4 7.0 5.6 4.2 2.8 tj=125 c -55 c 25 c 60 50 40 30 20 10 1 1 14 28 42 56 70 v gs =10v 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =15a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua
stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area vds=50v,id=1a vgs=10v 120 100 80 60 40 20 0 10 0 125 c 75 c 25 c i d =15a 10 1 60 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 0 5 0.1 1 10 100 100 10 1 0.3 r d s (on) lim it v gs =10v single pulse t c =25 c dc 10 m s 1 m s 100us 10u s 10 8 6 4 2 0 0510 15 20 25 30 35 40 8 6 4 2 ciss crss coss v ds =50v id=15a td(on) 10 1100 1 10 100 tr td(off) tf 01.25 1.00 0.75 0.50 0.25 125 c 75 c 25 c
t p v (br )dss i as figure 13b. stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v
stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
stu/d35l01 ver 2.1 www.samhop.com.tw oct,29,2010 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
|
